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K5A3240YTC-T755

Part Number	K5A3240YTC-T755
Manufacturer	Samsung semiconductor
Description	Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Published	Apr 7, 2005
Detailed Description	K5A3x40YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash...
Datasheet	K5A3240YTC-T755 PDF File

Overview

K5A3x40YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No.
History 0.
0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to your questions about device.
If you have any questions, please contact the SAMSUNG branch offices.
-1- Revision 0.
0 November 2002 K5A3x40YT(B)C Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM FEATURES • Power Supply voltage : 2.
7V to 3.
3V • Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16 bit • Access Time (@2.
7V) - Flash : 70 ns, SRAM : 55 ns • Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 20 mA Standby Current : 0.
5 µA • Secode(Security Code) Block : Extra 64KB Block (Flash) • Block Group Protection / Unprotection (Flash) • Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb • Flash Endurance : 100,000 Program/Erase Cycles Minimum • SRAM Data Retention : 1.
5 V (min.
) • Industrial Temperature : -40°C ~ 85°C • Package : 69-ball TBGA Type - 8 x 11mm, 0.
8 mm pitch 1.
2mm(max.
) Thickness GENERAL DESCRIPTION The K5A3x40YT(B)C featuring single 3.
0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM.
The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit.
The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability.
This device is c...

Similar Datasheet

K5A3240YTC-T755 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM - Samsung semiconductor

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