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K6R1008C1B-C12

Samsung semiconductor
Part Number K6R1008C1B-C12
Manufacturer Samsung semiconductor
Description 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
Published Apr 7, 2005
Detailed Description PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin ...
Datasheet PDF File K6R1008C1B-C12 PDF File

K6R1008C1B-C12
K6R1008C1B-C12

Overview
PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Preliminary PRELIMINARY CMOS SRAM Revision History Rev No.
Rev.
0.
0 Rev.
1.
0 History Initial release with Design Target.
Release to Preliminary Data Sheet.
1.
1.
Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.
1.
Delete Preliminary.
2.
2.
Delete 32-SOJ-300 package.
2.
3.
Delete L-version.
2.
4.
Delete Data Retention Characteristics and Waveform.
2.
5.
Add Capacitive load of the test environment in A.
C test load.
2.
6.
Change D.
C characteristics.
Previous spec.
Changed spec.
Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Draft Data Apr.
1st, 1997 Jun.
1st, 1997 Remark Design Target Preliminary Rev.
2.
0 Feb.
25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to ch...


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