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K9F1208R0B

Samsung semiconductor
Part Number K9F1208R0B
Manufacturer Samsung semiconductor
Description 64M x 8 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History R...
Datasheet PDF File K9F1208R0B PDF File

K9F1208R0B
K9F1208R0B

Overview
K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No.
History 0.
0 Initial issue.
Draft Date Apr.
24th 2004 Remark Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.
http://www.
samsung.
com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.
htm The attached datasheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions about device.
If you have any questions, please contact the SAMSUNG branch office near you.
1 K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY 64M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F1208Q0B-D,H K9F1208D0B-Y,P K9F1208D0B-D,H K9F1208U0B-Y,P K9F1208U0B-D,H K9F1208U0B-V,F 2.
7 ~ 3.
6V Vcc Range 1.
70 ~ 1.
95V 2.
4 ~ 2.
9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1 FEATURES • Voltage Supply - 1.
8V device(K9F1208Q0B) : 1.
70~1.
95V - 2.
65V device(K9F1208D0B) : 2.
4~2.
9V - 3.
3V device(K9F1208U0B) : 2.
7 ~ 3.
6 V • Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.
) - Serial Page Access : 50ns(Min.
) • Fast Write Cycle Time - Program time : 200µs(Typ.
) - Block Erase Time : 2ms(Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection • Package - K9F1208X0B-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.
5 mm pitch) - K9F1208X0B-GCB0/GIB0 63- Ball FBGA (8.
5 x 13 , 1.
0 mm width) -...


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