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K9F5608Q0B-HIB0

Part Number	K9F5608Q0B-HIB0
Manufacturer	Samsung semiconductor
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Published	Apr 7, 2005
Detailed Description	K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,H...
Datasheet	K9F5608Q0B-HIB0 PDF File

Overview

K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No.
History 0.
0 0.
1 Initial issue.
At Read2 operation in X16 device : A3 ~ A7 are Don’ t care ==> A3 ~ A7 are "L" 1.
IOL(R/B) of 1.
8V device is changed.
-min.
Value: 7mA -->3mA -typ.
Value: 8mA -->4mA 2.
AC parameter is changed.
tRP(min.
) : 30ns --> 25ns 3.
WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 15.
---> WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10µs is required before internal circuit gets ready...

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K9F5608Q0B-HIB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory - Samsung semiconductor

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