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SMBT5087

Infineon Technologies AG
Part Number SMBT5087
Manufacturer Infineon Technologies AG
Description PNP Silicon Transistor
Published Apr 7, 2005
Detailed Description SMBT5087 PNP Silicon Transistor  For AF input stages and driver applications  High current gain  Low collector-emitte...
Datasheet PDF File SMBT5087 PDF File

SMBT5087
SMBT5087

Overview
SMBT5087 PNP Silicon Transistor  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30Hz and 15kHz 3 2 1 Pin Configuration VPS05161 Type SMBT5087 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 °C Junction temperature Storage temperature Marking s2Q 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 50 50 3 50 330 150 -65 .
.
.
150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit K/W 240 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector -base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0 , TA = 150 °C DC current gain1) IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA AC Characteristics Transition frequency IC = 0.
5 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Short-circuit forward current transf.
ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, F 2 2 dB h21e 250 900 Ccb 4 pF fT 40 MHz Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 50 3 - - V hFE 250 250 250 VCEsat VBEsat - - 10 50 20 nA nA µA - - 800 0.
3 0.
85 V  f = 200 Hz, RS = 3 k RS = 10 k IC = 2 mA, VCE = 5 V, f = 10HZ to 15kHz , 1Puls test: t 300µs, D = 2% 2 Nov-30-2001 SMBT5087 Total power dissipation Ptot = (TS ) Collector-base capacitance CCB =  (VCB0) Emitter-base capacitanc...


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