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SMBTA42M

Infineon Technologies AG
Part Number SMBTA42M
Manufacturer Infineon Technologies AG
Description NPN Silicon High-Voltage Transistor
Published Apr 7, 2005
Detailed Description SMBTA42M NPN Silicon High-Voltage Transistor  High breakdown voltage  Low collector-emitter saturation voltage  Compl...
Datasheet PDF File SMBTA42M PDF File

SMBTA42M
SMBTA42M

Overview
SMBTA42M NPN Silicon High-Voltage Transistor  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA92M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA42M Maximum Ratings Parameter Marking s1D 1=B Pin Configuration 2=C 3=E Package 4=n.
c.
5 = C SCT595 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 6 500 100 1.
5 150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS  83 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS 45 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA42M Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ.
max.
Unit 300 300 6 - - 100 20 100 V nA µA nA - 25 40 40 - - 0.
5 0.
9 V Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% fT Ccb 50 - - 3 MHz pF 2 Nov-30-2001 SMBTA42M Total power dissipation Ptot = f(TS) DC current gain hFE = f (I C) VCE = 10V 1.
8 10 3 5 h FE 10 2 5 SMBTA 42/43 EHP00844 mW 1.
4 P tot 1.
2 1 0.
8 0.
6 0.
4 0.
2 0 0 10 1 5 15 30 45 60 75 90 105 120 °C 150 TS 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC Permiss...


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