DatasheetsPDF.com

SM746

Part Number	SM746
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	Apr 7, 2005
Detailed Description	polyfet rf devices SM746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	SM746 PDF File

Overview

polyfet rf devices SM746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 175.
0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.
65 C/W Maximum Junction Temperature o...

Similar Datasheet

SM7.5 SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR - MIC
SM7.5A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR - MIC
SM7002NSAN N-Channel MOSFET - Sinopower
SM7002NSF N-Channel MOSFET - Sinopower
SM7003NSF N-Channel MOSFET - Sinopower
SM7003NSFH N-Channel MOSFET - Sinopower
SM7003NSU N-Channel MOSFET - Sinopower
SM7012 AC / DC PWM power switch - Sunmoon
SM7012 AC/DC PWM power switch - JIU XIN
SM7012-CR1 Right Angle and Straight GBIC Connectors - Selectronix

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)