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SI9802DY

Vishay Siliconix
Part Number SI9802DY
Manufacturer Vishay Siliconix
Description Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Published Apr 8, 2005
Detailed Description Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0...
Datasheet PDF File SI9802DY PDF File

SI9802DY
SI9802DY

Overview
Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.
055 @ VGS = 4.
5 V 0.
075 @ VGS = 3.
0 V ID (A) "4.
5 "3.
8 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 "4...


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