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SI2315DS

Vishay Siliconix
Part Number SI2315DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.055 @ VGS = ...
Datasheet PDF File SI2315DS PDF File

SI2315DS
SI2315DS

Overview
Si2315DS Vishay Siliconix P-Channel 1.
25-W, 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.
055 @ VGS = - 4.
5 V 0.
075 @ VGS = - 2.
5 V 0.
118 @ VGS = - 1.
8 V ID (A) "3.
5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2315DS-T1 Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 "3.
5 "2.
8 "...


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