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SI4429EDY

Part Number	SI4429EDY
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = ...
Datasheet	SI4429EDY PDF File

Overview

Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
0105 @ VGS = –10 V –30 0.
0125 @ VGS = –4.
5 V 0.
0195 @ VGS = –2.
5 V FEATURES ID (A) –13.
0 –12.
0 –9.
0 D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V APPLICATIONS D Battery Switch D Load Switch D SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.
5 kW ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.
0 IDM IS –2.
5 3.
0 1.
9 –55 to 150 –50 –1.
3 1.
5 0.
9 W _C –7.
5 A Symbol VDS VGS 10 secs Steady State –30 "12 Unit V –13.
0 –9.
4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
S...

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SI4429EDY P-Channel MOSFET - Vishay Siliconix

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