DatasheetsPDF.com

SI4465DY

Part Number	SI4465DY
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	P-Channel 1.8-V (G-S) MOSFET Si4465DY Vishay Siliconix PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) 0.009 @ VGS = –4.5 V 0...
Datasheet	SI4465DY PDF File

Overview

P-Channel 1.
8-V (G-S) MOSFET Si4465DY Vishay Siliconix PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) 0.
009 @ VGS = –4.
5 V 0.
011 @ VGS = –2.
5 V 0.
016 @ VGS = –1.
8 V ID (A) –14 –12 –10 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4465DY-T1 Si4465DY-T1–E3 (Lead (Pb)–free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS –8 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM ...

Similar Datasheet

SI4465DY P-Channel MOSFET - Vishay Siliconix

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)