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SI4880DY

Part Number	SI4880DY
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0085 ...
Datasheet	SI4880DY PDF File

Overview

Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
0085 at VGS = 10 V 0.
014 at VGS = 4.
5 V ID (A) ± 13 ± 10 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • High-Efficiency • PWM Optimized • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4880DY-T1-E3 (Lead (Pb)-free) Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain C...

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SI4880DY N-Channel MOSFET - Vishay Siliconix

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