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SI4890DY

Vishay Siliconix
Part Number SI4890DY
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.012 a...
Datasheet PDF File SI4890DY PDF File

SI4890DY
SI4890DY

Overview
Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
012 at VGS = 10 V 0.
020 at VGS = 4.
5 V ID (A) ± 11 ±9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • High-Efficiency PWM Optimized • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4890DY-T1-E3 (Lead (Pb)-free) Si4890DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 25 ± 11 ±9 ± 50 2.
3 2.
5 1.
6 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Notes: a.
Surface Mounted on FR4 board.
b.
t ≤ 10 s.
t ≤ 10 s Steady State Symbol RthJA Typical 70 Maximum 50 Unit V A W °C Unit °C/W Document Number: 70855 S09-0869-Rev.
B, 18-May-09 www.
vishay.
com 1 Si4890DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 11 A VGS = 4.
5 V, ID = 9 A Forward Transconductancea gfs VDS = 15 V, ID = 11 A Diode Forward Voltagea VSD IS = 2.
3 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 5.
0 V, ID = 11 A Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Tim...


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