Dual P-Channel MOSFET
Description
Si4967DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.023 at VGS = - 4.5 V - 12 0.030 at VGS = - 2.5 V
0.045 at VGS = - 1.8 V
ID (A) - 7.5 - 6.7 - 5.4
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 ...
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