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SI4982DY

Vishay Siliconix
Part Number SI4982DY
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.150 at VGS = 1...
Datasheet PDF File SI4982DY PDF File

SI4982DY
SI4982DY

Overview
Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.
150 at VGS = 10 V 0.
180 at VGS = 6 V ID (A) 2.
6 2.
4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 2.
6 2.
1 20 1.
7 2.
0 1.
3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a.
S...


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