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SI5903DC

Vishay Siliconix
Part Number SI5903DC
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Dual P-Channel 2.5 V (G-S) MOSFET Si5903DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.155 at VGS = - 4....
Datasheet PDF File SI5903DC PDF File

SI5903DC
SI5903DC

Overview
Dual P-Channel 2.
5 V (G-S) MOSFET Si5903DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
155 at VGS = - 4.
5 V - 20 0.
180 at VGS = - 3.
6 V 0.
260 at VGS = - 2.
5 V ID (A) ± 2.
9 ± 2.
7 ± 2.
2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 D2 G2 Marking Code DA XX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free) Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 2.
9 ± 2.
1 ± 2.
1 ± 1.
5 Pulsed Drain Current IDM ± 10 Continuous Source Current (Diode Conduction)a IS - 1.
8 - 0.
9 Maximum Power Dissipatio...


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