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SI5915DC

Vishay Siliconix
Part Number SI5915DC
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Dual P-Channel 1.8 V (G-S) MOSFET Si5915DC Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.070 at VGS = - ...
Datasheet PDF File SI5915DC PDF File

SI5915DC
SI5915DC

Overview
Dual P-Channel 1.
8 V (G-S) MOSFET Si5915DC Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.
070 at VGS = - 4.
5 V 0.
108 at VGS = - 2.
5 V 0.
162 at VGS = - 1.
8 V ID (A) - 4.
6 - 3.
7 - 3.
0 1206-8 ChipFET® 1 S1 D1 D1 G1 S2 D2 G2 D2 Marking Code DE XX Lot Traceability and Date Code Part # Code FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance • 40 % Smaller Footprint than TSOP-6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch or PA Switch for Portable Devices S1 S2 G1 G2 Bottom View Ordering Information: Si5915DC-T1-E3 (Lead (Pb)-free) Si5915DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power D...


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