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SI6463BDQ

Vishay Siliconix
Part Number SI6463BDQ
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description P-Channel 1.8 V (G-S) MOSFET Si6463BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.015 at VGS = - 4.5 V ...
Datasheet PDF File SI6463BDQ PDF File

SI6463BDQ
SI6463BDQ

Overview
P-Channel 1.
8 V (G-S) MOSFET Si6463BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.
015 at VGS = - 4.
5 V - 20 0.
020 at VGS = - 2.
5 V 0.
027 at VGS = - 1.
8 V ID (A) - 7.
4 - 6.
3 - 5.
5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6463BDQ 8D 7S 6S 5D Top View Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.
4 - 5.
9 - 6.
2 - 4.
9 Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.
35 - 0.
95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.
5 1.
05 1.
0 0.
67 Operating Juncti...


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