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SI6544DQ

Vishay Siliconix
Part Number SI6544DQ
Manufacturer Vishay Siliconix
Description MOSFET
Published Apr 8, 2005
Detailed Description Si6544DQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.035 @ ...
Datasheet PDF File SI6544DQ PDF File

SI6544DQ
SI6544DQ

Overview
Si6544DQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.
035 @ VGS = 10 V 0.
050 @ VGS = 4.
5 V ID (A) "4.
0 "3.
4 "3.
5 "2.
5 P-Channel –30 0.
045 @ VGS = –10 V 0.
090 @ VGS = –4.
5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6544DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "4.
0 "3.
2 "20 1.
25 1.
0 P-Channel –30 "20 "3.
5 "2.
8 "20 –1.
25 Unit V A W 0.
64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70668 S-56944—Rev.
C, 23-Nov-98 www.
vishay.
com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 Si6544DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = –30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VDS w –5 V, VGS = –10 V VGS = 10 V, ID = 4.
0 A a D i S O S R i Drain-Source On-State Resistance Symbol Test Condition Min Typ Max Unit N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.
0 V –1.
0 "100 "100 1 –1 5 –5 20 A –20 0.
027 0.
035 0.
038 0.
062 13 S 7.
2 0.
73 –0.
77 1.
2 V –1.
2 0.
035 0.
045 0.
050 0.
090 W mA nA Gate-Body Leakage IGSS rDS(on) VGS = –10 V, ID = –3.
5 A VGS = 4.
5 V, ID = 3.
4 A VGS = –4.
5 V, ID = –2.
5 A Forward Transc...


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