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SI6801DQ

Part Number	SI6801DQ
Manufacturer	Vishay Siliconix
Description	Fast Switching MOSFET
Published	Apr 8, 2005
Detailed Description	Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 ...
Datasheet	SI6801DQ PDF File

Overview

Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) 0.
160 @ VGS = 4.
5 V 0.
260 @ VGS = 3.
0 V 0.
190 @ VGS = –4.
5 V 0.
280 @ VGS = –3.
0 V ID (A) "1.
9 "1.
5 "1.
7 "1.
3 TSSOP-8 D1 1 D S1 2 S1 3 Si6801DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 –20 "12 "1.
9 "1.
7 "1.
5 "1.
3 "8 1.
0 –1.
0 1.
0 0.
64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Parameter Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
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SI6801DQ Fast Switching MOSFET - Vishay Siliconix

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