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SI6911DQ

Vishay Siliconix
Part Number SI6911DQ
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0....
Datasheet PDF File SI6911DQ PDF File

SI6911DQ
SI6911DQ


Overview
Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
026 @ VGS = -4.
5 V -12 0.
035 @ VGS = -2.
5 V 0.
046 @ VGS = -1.
8 V D TrenchFETr Power MOSFETS ID (A) -5.
1 -4.
5 -3.
9 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6911DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 -5.
1 Steady State Unit V -4.
3 -3.
5 -30 A -0.
7 0.
83 0.
53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -4.
1 -1.
0 1.
14 0.
73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Ju...



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