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SI6925DQ

Vishay Siliconix
Part Number SI6925DQ
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 20 0...
Datasheet PDF File SI6925DQ PDF File

SI6925DQ
SI6925DQ

Overview
Si6925DQ Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
05 @ VGS = 4.
5 V 20 0.
06 @ VGS = 3.
0 V 0.
08 @ VGS = 2.
5 V ID (A) "3.
4 "3.
1 "2.
7 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6925DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 "3.
4 "2.
7 "30 1.
25 1 Unit V A W 0.
64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 70631 S-49455—Rev.
A, 17-Dec-96 www.
vishay.
com S FaxBack 408-970-5600 Symbol RthJA Limit 125 Unit _C/W 2-1 Si6925DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 3.
4 A b D i S Drain-Source On-State O S Resistance R i Symbol Test Condition Min Typa Max Unit 0.
5 "100 1 5 10 0.
038 0.
044 0.
048 18 0.
7 1.
2 0.
05 0.
07 0.
08 V nA mA A rDS(on) VGS = 3.
0 V, ID = 3.
1 A VGS = 2.
5 V, ID = 2.
7 A W Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 3.
4 A IS = 1.
25 A, VGS = 0 V S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf...


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