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IPB05N03LA

Infineon Technologies AG
Part Number IPB05N03LA
Manufacturer Infineon Technologies AG
Description OptiMOS 2 Power-Transistor
Published Apr 16, 2005
Detailed Description IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-c...
Datasheet PDF File IPB05N03LA PDF File

IPB05N03LA
IPB05N03LA

Overview
IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 4.
6 80 V mΩ A P-TO262-3-1 P-TO220-3-1 Type IPB05N03LA IPI05N03LA IPP05N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4141 Q67042-S4142 Q67042-S4143 Marking 05N03LA 05N03LA 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=72 A, R GS=25 Ω I D=80 A, V DS=...


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