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IPF06N03LA

Infineon Technologies AG
Part Number IPF06N03LA
Manufacturer Infineon Technologies AG
Description OptiMOS 2 Power-Transistor
Published Apr 16, 2005
Detailed Description IPF06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • ...
Datasheet PDF File IPF06N03LA PDF File

IPF06N03LA
IPF06N03LA

Overview
IPF06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS R DS(on),max ID 25 5.
4 50 V mΩ A P-TO252-3-23 Type IPF06N03LA Package P-TO252-3-23 Ordering Code Q67042-S4194 Marking 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 300 6 ±20 94 -55 .
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175 55/175/56 mJ kV/µs V W °C Unit A Rev.
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2 page 1 2003-12-19 IPF0...


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