DatasheetsPDF.com

IPU07N03L

Infineon Technologies AG
Part Number IPU07N03L
Manufacturer Infineon Technologies AG
Description OptiMOS Buck converter series
Published Apr 16, 2005
Detailed Description IPD07N03L IPU07N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 ...
Datasheet PDF File IPU07N03L PDF File

IPU07N03L
IPU07N03L


Overview
IPD07N03L IPU07N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 6.
8 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converters Type IPD07N03L IPU07N03L Package P- TO252 -3-11 P- TO251 -3-1 Ordering Code Q67042-S4029 Q67042-S4105 Marking 07N03L 07N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value Unit A 30 30 Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=20A, V DD=25V, RGS=25Ω EAS 30 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C EAR dv/dt 15 6 kV/µs Gate source voltage Power dissipation TC=25°C VGS Ptot ±20 150 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55.
.
.
+175 55/175/56 °C Page 1 2003-01-17 IPD07N03L IPU07N03L Thermal Characteristics Parameter Symbol min.
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Values typ.
max.
Unit RthJC RthJA RthJA - 0.
68 - 1 100 K/W - - 75 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage VGS=0V, I D=1mA Values typ.
max.
Unit V(BR)DSS 30 - - V Gate threshold voltage, V GS = VDS ID = 80 µA VGS(th) 1.
2 1.
6 2 Zero gate voltage drain current VDS=30V, V GS=0V, T j=25°C VDS=30V, V GS=0V, T j=125°C IDSS IGSS 0.
01 10 1 1 100 100 µA Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.
5V, ID=30A RDS(on) - 7.
7 9.
9 mΩ Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 5.
7 6.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)