DatasheetsPDF.com

IRF5N4905

International Rectifier
Part Number IRF5N4905
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94163 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N4905 55V, P-CHANNEL Product Summary Part Number IRF5N4905 ...
Datasheet PDF File IRF5N4905 PDF File

IRF5N4905
IRF5N4905

Overview
PD - 94163 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N4905 55V, P-CHANNEL Product Summary Part Number IRF5N4905 BVDSS -55V RDS(on) 0.
024Ω ID -55A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-1 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page -55* -36 -220 125 1.
0 ±20 330 -36 12.
5 4.
0 -55 to 150 300 (for 5 s) 2.
6 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 04/09/01 IRF5N4905 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -55 — — -2.
0 19 — — — — — — — — — — — — Ty...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)