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IRF7910

International Rectifier
Part Number IRF7910
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94419 IRF7910 HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck C...
Datasheet PDF File IRF7910 PDF File

IRF7910
IRF7910

Overview
PD - 94419 IRF7910 HEXFET® Power MOSFET Applications l High Frequency 3.
3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications S1 VDSS 12V RDS(on) max 15mΩ @VGS = 4.
5V ID 10A 1 8 D1 D1 D2 D2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current G1 S2 G2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max.
12 ± 12 10 7.
9 79 2.
0 1.
3 16 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 62.
5 Units °C/W Notes  through „ are on page 8 www.
irf.
com 1 4/29/02 IRF7910 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RDS(on) VGS(th) IDSS IGSS Min.
12 ––– ––– ––– 0.
6 ––– ––– ––– ––– Typ.
––– 0.
01 11.
5 20 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 15 VGS = 4.
5V, ID = 8.
0A ƒ mΩ 50 VGS = 2.
8V, I D = 5.
0A 2.
0 V VDS = VGS, ID = 250µA 100 VDS = 9.
6V, VGS = 0V µA 250 VDS = 9.
6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-D...


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