IRFF9230
Data Sheet February 1999 File Number 2225.2
-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are design...