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IRFI520N

International Rectifier
Part Number IRFI520N
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1362A PRELIMINARY IRFI520N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High ...
Datasheet PDF File IRFI520N PDF File

IRFI520N
IRFI520N

Overview
PD - 9.
1362A PRELIMINARY IRFI520N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS … Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated VDSS = 100V G S RDS(on) = 0.
20Ω ID = 7.
6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additio...


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