Power MOSFET
Description
PD - 9.1488
PRELIMINARY
l l l l l l
IRFI9634G
HEXFET® Power MOSFET
D
Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
VDSS = -250V RDS(on) = 1.0Ω
G
ID = -4.1A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of f...
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