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XP162A12A6PR

Torex Semiconductor
Part Number XP162A12A6PR
Manufacturer Torex Semiconductor
Description Power MOSFET
Published Apr 16, 2005
Detailed Description P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Di...
Datasheet PDF File XP162A12A6PR PDF File

XP162A12A6PR
XP162A12A6PR

Overview
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.
17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Features Low on-state resistance : Rds (on) = 0.
17 Ω ( Vgs = -4.
5V ) Rds (on) ...


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