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XP4216

Panasonic Semiconductor
Part Number XP4216
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XP4216 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For switch...
Datasheet PDF File XP4216 PDF File

XP4216
XP4216

Overview
Composite Transistors XP4216 Silicon NPN epitaxial planer transistor Unit: mm 0.
425 1.
25±0.
1 0.
425 0.
2±0.
05 For switching/digital circuits 2.
1±0.
1 0.
65 q q Two elements incorporated into one package.
(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1 s Features 0.
65 1 2 3 6 5 4 0.
2 0.
9±0.
1 s Basic Part Number of Element q 0 to 0.
1 UN1216 × 2 elements 0.
7±0.
1 0.
2±0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 8U Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.
3mA VCC = 5V, VB = 0.
5V, RL = 1kΩ VCC = 5V, VB = 2.
5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 150 4.
7 +30% 4.
9 0.
2 160 min 50 50 0.
1 0.
5 0.
01 460 0.
25 V V V MHz kΩ typ max Unit V V µA µA mA 0.
12 –0.
02 +0.
05 1 Composite Transistors PT — Ta 250 XP4216 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.
0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.
3 Ta...


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