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ZDT6718

Zetex Semiconductors
Part Number ZDT6718
Manufacturer Zetex Semiconductors
Description COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS
Published Apr 16, 2005
Detailed Description SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6718 C1 C1 C2 C2 PARTMARKING DETAIL –...
Datasheet PDF File ZDT6718 PDF File

ZDT6718
ZDT6718

Overview
SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6718 C1 C1 C2 C2 PARTMARKING DETAIL – T6718 B1 E1 B2 E2 NPN PNP SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg NPN 20 20 5 6 2 PNP -20 -20 -5 -6 -1.
5 UNIT V V V A A °C -55 to +150 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2 2.
5 16 20 62.
5 50 UNIT W W mW/ °C mW/ °C °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
3 - 372 ZDT6718 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 7 70 130 0.
89 0.
79 200 300 200 100 100 400 450 360 180 140 23 170 400 30 MHz pF MIN.
20 20 5 TYP.
100 27 8.
3 100 100 100 15 150 200 1.
0 1.
0 MAX.
UNIT V V V nA nA nA mV mV mV V V CONDITIONS.
IC=100µ A IC=10mA* IE=100µ A VCB=16V VEB=4V VCES=16V IC=0.
1A, IB=10mA* IC=1A, IB=10mA* IC=2.
5A, IB=50mA* IC=2.
5A, IB=50mA* IC=2.
5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA VBE(sat) VBE(on) hFE fT Cobo ton toff *Measured under puls...


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