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VN2406L

Part Number	VN2406L
Manufacturer	Motorola Inc
Description	TMOS FET Transistor
Published	Apr 16, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2406L/D TMOS FET Transistor N–Channel — Enhancement 3 ...
Datasheet	VN2406L PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2406L/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE VN2406L Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR 240 60 Vdc Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 mAdc IDM 500 mAdc PD 350 mW 2.
8 mW/°C Operating and Storage Temperature THERMAL CHARACTERISTICS TJ, Tstg — °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Maximum Lead T...

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