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VHB1-12T

Part Number	VHB1-12T
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 16, 2005
Detailed Description	VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 B ØA 45° C ...
Datasheet	VHB1-12T PDF File

Overview

VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC O F 400 mA (MAX) 40 V 20 V 40 V 2.
0 V 3.
5 W @ TC = 25 OC -65 C to +200 C -65 OC to +200 OC 20 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .
200 / 5.
080 .
029 / 0.
740 .
028 / 0.
720 .
335 / 8.
510 .
305 / 7.
750 .
240 / 6.
100 .
500 / 12.
700 .
016 / 0.
407 .
020 / 0.
508 .
045 / 1.
140 .
034 / 0.
860 .
370 / 9.
370 .
335 / 8.
500 .
260 / 6.
600 ORDER CODE: ASI10711 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICEO hFE VCE(SAT) COB PG ηC TC = 25 C O NONETE...

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VHB1-12T NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

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