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TXDV808

STMicroelectronics
Part Number TXDV808
Manufacturer STMicroelectronics
Description ALTERNISTORS
Published Apr 16, 2005
Detailed Description TXDV 408 ---> 808 ALTERNISTORS . . . FEATURES VERY HIGH COMMUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS...
Datasheet PDF File TXDV808 PDF File

TXDV808
TXDV808

Overview
TXDV 408 ---> 808 ALTERNISTORS .
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FEATURES VERY HIGH COMMUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dV/dt : 500 V/µs min DESCRIPTION The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology.
Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer.
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) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter A1 A2 G TO220AB (Plastic) Value Tc = 90 °C 8 Unit A ITSM tp = 2.
5 ms tp = 8.
3 ms tp = 10 ms 115 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.
5 mm from case °C °C °C Symbol Parameter 408 TXDV 608 600 808 800 Unit VDRM VRRM March 1995 Repetitive peak off-state voltage Tj = 125 °C 400 V 1/5 TXDV 408 ---> 808 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 4 3 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=110°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs * For either polarity of electrode A2 voltage with reference to electrode A1.
Value MAX MAX ...


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