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TS7990

Sanyo Semicon Device
Part Number TS7990
Manufacturer Sanyo Semicon Device
Description Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Published Apr 16, 2005
Detailed Description Ordering number :EN5960 NPN Triple Diffused Planar Silicon Transistor TS7990 Ultrahigh-Definition CRT Display Horizont...
Datasheet PDF File TS7990 PDF File

TS7990
TS7990


Overview
Ordering number :EN5960 NPN Triple Diffused Planar Silicon Transistor TS7990 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions unit:mm 2039D-TO3PML [TS7990] ø3.
4 16.
0 5.
6 3.
1 5.
0 8.
0 21.
0 22.
0 4.
0 2.
8 2.
0 2.
0 20.
4 1.
0 0.
6 1 2 3 5.
45 5.
45 1:Base 2:Collector 3:Emitter SANYO:TO-3PML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 15 35 3.
0 75 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCB=800V, IE=0 VCE=5V, IC=1.
0A VCE=5V, IC=11A IC=11A, IB=2.
75A IC=11A, IB=2.
75A IC=9A, IB1=1.
5A, IB2=–3.
75A IC=9A, IB1=1.
5A, IB2=–3.
75A 15 4 Conditions Ratings min 800 1.
0 10 30 7 5 1.
5 3.
0 0.
2 V V µs µs typ max 1.
0 Unit mA V mA µA SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42498TS (KOTO) TA-1621 No.
5960-1/3 3.
5 2.
0 TS7990 Switching Time Test Circuit PW=20µs DC≤1% INPUT RB VR 50Ω + 100µF + 470µF RL=22.
2Ω IB1 IB2 OUTPUT VBE=–2V VCC=200V 14 12 I C - VCE 16 14 I C - VBE VCE =5V Collerctor Current, IC – A Collerctor Current, IC – A 10 8 6 4 1.
4A 1.
2A 1.
0A 12 10 8 0.
8A 0.
6A 0.
4A 20˚ 4 2 2 IB = 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0 0.
2 0.
4 0.
6 Ta= 1 25˚C 0.
2A 0.
8 ...



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