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TPC8303

Toshiba Semiconductor
Part Number TPC8303
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8303 PDF File

TPC8303
TPC8303

Overview
TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.
) Unit: mm High forward transfer admittance : |Yfs| = 7 S (typ.
) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.
8~ −2.
0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating −30 −30 ±20 −4.
5 −18 1.
5 W PD(2) 1.
0 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-d...


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