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TIM7785-16UL

Part Number	TIM7785-16UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Apr 16, 2005
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7G...
Datasheet	TIM7785-16UL PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
5dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.
6A f = 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.
5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X R...

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TIM7785-16UL MICROWAVE POWER GaAs FET - Toshiba Semiconductor

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