TIP102 — NPN Epitaxial Silicon Darlington Transistor
December 2014
TIP102 NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial...