DatasheetsPDF.com

TGF4250-EEU

TriQuint Semiconductor
Part Number TGF4250-EEU
Manufacturer TriQuint Semiconductor
Description 4.8 mm Discrete HFET
Published Apr 16, 2005
Detailed Description T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4250-EEU 4.8 mm Discr ete HFET q q q q q ...
Datasheet PDF File TGF4250-EEU PDF File

TGF4250-EEU
TGF4250-EEU

Overview
T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGF4250-EEU 4.
8 mm Discr ete HFET q q q q q q PHOTO ENLARGEMENT 4800 µm x 0.
5 µm HFET Nominal Pout of 34- dBm at 8.
5- GHz Nominal Gain of 8.
5- dB at 8.
5- GHz Nominal PAE of 53% at 8.
5 - GHz Suitable for high reliability applications 4250 0,572 x 1,334 x 0,102 mm (0.
023 x 0.
053 x 0.
004 in.
) DESCRIPTION The TriQuint TGF4250-EEU is a single gate 4.
8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10.
5- GHz in Class A and Class AB operation.
Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach methods as well as thermocompr ession and thermosonic wire-bonding processes.
The TGF4250-EEU is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc.
• Texas Facilities • (972) 995-8465 • www.
triquint.
com TGF4250-EEU p EXAMPLE OF DC I-V CURVES 1.
1 1 0.
9 VG = 0.
0 to -2.
25 V (0.
25 V steps) T A=65°C Drain Current (A) 0.
8 0.
7 0.
6 0.
5 0.
4 0.
3 0.
2 0.
1 0 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (V) OUTPUT POWER VS.
INPUT POWER Output Power (dBm) 36 34 32 30 28 26 24 F =8.
5 GHz VD =8.
0 V I Q =200 mA* T A =25°C 22 20 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) * I Q is defined as the drain current before application of RF signal at the input.
POWER ADDED EFFICIENCY VS.
INPUT POWER 55 50 45 40 35 F =8.
5 GHz VD =8.
0 V I Q =200 mA T A =25°C PAE (%) 30 25 20 15 10 5 0 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) 2 TriQuint Semiconductor, Inc.
• Texas Facilities • (972) 995-8465 • www.
triquint.
com TGF4250-EEU GAIN VS.
INPUT POWER 11 F =8.
5GHz VD =8.
0V I Q =200 mA C T A =25° 10 Gain (dB) 9 8 7 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) DRAIN CURRENT VS.
INPUT POWER 0.
6 0.
55 0.
5 F =8.
5GHz VD =8.
0V I Q =200 mA C T A =25° Drain Current (A) 0.
45 0.
4 0.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)