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RN2305

Part Number	RN2305
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Apr 16, 2005
Detailed Description	RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Swi...
Datasheet	RN2305 PDF File

Overview

RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1301~1306 Unit: mm Equivalent Circuit Bias Resistor Values Type No.
RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2301~2306 RN2301~2306 RN2301~2304 RN2305, 2306 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
006g ― SC-70 2-2E1A Unit V V V mA mW °C °C 1 2001-06-07 RN2301~RN2306 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2301~2306 RN2301 RN2302 Emitter cut-off current RN2303 RN2304 RN2305 RN2306 RN2301 RN2302 DC current gain RN2303 RN2304 RN2305 RN2306 Collector-emitter saturation voltage RN2301~2306 RN2301 RN2302 Input voltage (ON) RN2303 RN2304 RN2305 RN2306 Input voltage (OFF) Translation frequency Collector output capacitance RN2301~2304 RN2305, 2306 RN2301~2306 RN2301~2306 RN2301 RN2302 Input resistor RN2303 RN2304 RN2305 RN2306 RN2301~2304 Resistor ratio RN2305 RN2306 R1/R2 R1 VI (OFF) fT Cob VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = −5V, IC = −0.
1mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0 f = 1MHz VCE = −0.
2V IC = −5mA IC = −5mA IB = −0.
25mA VCE = −5V IC = −10mA VEB = −5V, IC = 0 VEB = −10V, IC = 0 Test Condition VCB = −50V, IE = 0 VCE = −50V, IB = 0 Min ― ― −0.
82 −0.
38 −0.
17 −0.
082 −0.
078 −0.
074 30 50 70 80 80 80 ― −1.
1 −1.
2 −1.
3 −1.
5 −0.
6 −0.
7 −1.
0 −0.
5 ― ― 3.
29 7 15.
4 32.
9 1.
54 3.
2...

Similar Datasheet

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