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RFD4N06L

Part Number	RFD4N06L
Manufacturer	Intersil Corporation
Description	4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs
Published	Apr 16, 2005
Detailed Description	RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs T...
Datasheet	RFD4N06L PDF File

Overview

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.
1 4A, 60V, 0.
600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages.
Formerly developmental type TA09520.
Features • 4A, 60V • rDS(ON) = 0.
600Ω • Design Opt...

Similar Datasheet

RFD4N06L 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs - Fairchild Semiconductor
RFD4N06L 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation
RFD4N06LSM 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs - Fairchild Semiconductor
RFD4N06LSM 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation

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