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RFL2N06L

Intersil Corporation
Part Number RFL2N06L
Manufacturer Intersil Corporation
Description 2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06...
Datasheet PDF File RFL2N06L PDF File

RFL2N06L
RFL2N06L

Overview
RFL2N06L Data Sheet October 1999 File Number 1560.
3 2A, 60V, 0.
950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA9520.
Features • 2A, 50V and 60V • rDS(ON) = 0.
950Ω • Design Optimized for 5V Gate Drives • Can be Driven from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Di...


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