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RFP40N10LE

Intersil Corporation
Part Number RFP40N10LE
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level N-Ch...
Datasheet PDF File RFP40N10LE PDF File

RFP40N10LE
RFP40N10LE

Overview
RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.
5 40A, 100V, 0.
040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49163.
Features • 40A, 100V • rDS(ON) = 0.
040Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG40N10LE RFP40N10LE RF1S40N10LESM PACKAGE TO-247 TO-220AB TO-263AB BRAND FG40N10L FP40N10L F40N10LE Symbol D G NOTE: When ordering, use the entire part number.
Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.
e.
RF1S40N10LESM9A.
S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG40N10LE, RFP40N10LE, RF1S40N10LESM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG40N10LE, RFP40N10LE, RF1S40N10LESM 100 100 ±10 40 Refer to Peak Current Curve Refer to UIS Curve 150 1.
00 -55 to 175 300 260 UNITS V V V A Drain to Source Breakdown Voltage (Note 1) .
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VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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