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RA20H8087M

Mitsubishi Electric Semiconductor
Part Number RA20H8087M
Manufacturer Mitsubishi Electric Semiconductor
Description 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M BLOCK DIAGRAM 806-8...
Datasheet PDF File RA20H8087M PDF File

RA20H8087M
RA20H8087M

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M BLOCK DIAGRAM 806-825/ 851-870MHz 20W 12.
5V, 3 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 806- to 870-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases...


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