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RC30S06

Shanghai Sunrise Electronics
Part Number RC30S06
Manufacturer Shanghai Sunrise Electronics
Description SILICON SILASTIC CELL RECTIFIER
Published Apr 16, 2005
Detailed Description SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01 THRU RC30S10 SILICON SILASTIC CELL RECTIFIER VOLTAGE: 100 TO 1000V CURREN...
Datasheet PDF File RC30S06 PDF File

RC30S06
RC30S06


Overview
SHANGHAI SUNRISE ELECTRONICS CO.
, LTD.
RC30S01 THRU RC30S10 SILICON SILASTIC CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Ta=55oC) (Note 2) Peak Forward Surge Current (8.
3ms single half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage (at rated forward current) Maximum DC Reverse Current Ta=25oC (at rated DC blocking voltage) Typical Junction Capacitance Typical Thermal Resistance Ta=150 C o SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR RC30S RC30S RC30S RC30S RC30S RC30S UNITS 01 02 04 06 08 10 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 30 400 0.
95 10 1000 300 1 -50 to +150 o A A V µA µA pF C/W o C CJ (Note 1) (Note 3) Rθ(ja) Storage and Operation Junction Temperature TSTG,TJ Note: 1.
Measured at 1 MHz and applied voltage of 4.
0Vdc 2.
When mounted to heat sink from body.
3.
Thermal resistance from junction to ambient.
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