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PBSS2540F

NXP
Part Number PBSS2540F
Manufacturer NXP
Description 40 V low V NPN transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 ...
Datasheet PDF File PBSS2540F PDF File

PBSS2540F
PBSS2540F

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors.
APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras, hand-held devices).
DESCRIPTION handbook, halfpage PBSS2540F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 NPN low VCEsat transistor in a SC-89 (SOT490) plastic package.
PNP complement: PBSS3540F.
1 2 M...


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