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QED423

Fairchild Semiconductor
Part Number QED423
Manufacturer Fairchild Semiconductor
Description PLASTIC INFRARED LIGHT EMITTING DIODE
Published Apr 16, 2005
Detailed Description PLASTIC INFRARED LIGHT EMITTING DIODE QED422 PACKAGE DIMENSIONS 0.190 (4.83) 0.178 (4.52) QED423 REFERENCE SURFACE 0....
Datasheet PDF File QED423 PDF File

QED423
QED423


Overview
PLASTIC INFRARED LIGHT EMITTING DIODE QED422 PACKAGE DIMENSIONS 0.
190 (4.
83) 0.
178 (4.
52) QED423 REFERENCE SURFACE 0.
220 (5.
59) 0.
030 (0.
76) NOM 0.
800 (20.
3) MIN 0.
050 (1.
27) CATHODE 0.
100 (2.
54) NOM Ø 0.
215 (5.
46) NOM SCHEMATIC 45° 0.
020 (0.
51) SQ.
(2X) ANODE R 0.
022 (0.
56) CATHODE NOTES: 1.
Dimensions for all drawings are in inches (mm).
2.
Tolerance of ± .
010 (.
25) on all non-nominal dimensions unless otherwise specified.
DESCRIPTION The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package.
FEATURES • • • • • • • λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30° High Output Power Package material and color: clear, purple tinted, plastic © 2002 Fairchild Semiconductor Corporation Page 1 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit °C °C °C °C mA V mW QED423 Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1.
Derate power dissipation linearly 2.
67 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Soldering iron 1/16" (1.
6 mm) minimum from housing .
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC522 Radiant Intensity QEC523 Rise Time Fall Time Test Conditions IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA Symbol λPE 2Θ1/2 VF IR IE IE tr tf Min — — — — 10 20 — — Typ 880 30 — — — — 800 800 Max — — 1.
8 10 40 — — — Units nm Deg.
V µA mW/sr mW/sr ns ns © 2002 Fa...



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