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PBSS4350S

Part Number	PBSS4350S
Manufacturer	NXP
Description	50 V low VCEsat NPN transistor
Published	Mar 22, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product speciﬁcation 2001 ...
Datasheet	PBSS4350S PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product speciﬁcation 2001 Nov 19 Philips Semiconductors Product speciﬁcation 50 V low VCEsat NPN transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generation APPLICATIONS • Medium power switching and muting • Linear regulators • DC/DC convertor • Supply line switching circuits • Battery management applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers).
DESCRIPTION NPN low VCEsat transistor in a SOT54 pla...

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